IndiumV3, Russie, Analysis, bibRecord, 000173

Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique

Identifieur interne : 000173 ( Russie/Analysis ); précédent : 000172; suivant : 000174

Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique

Auteurs : RBID : Pascal:10-0079084

Descripteurs français

Pascal (Inist)
- Impulsion optique, Interférométrie optique, Domaine temps ps, Composé quaternaire, Gallium Arséniure, Indium Phosphure, Gallium Phosphure, Indium Arséniure, Composé binaire, Semiconducteur III-V, InGaAsP, As Ga In P, In P, InP, 0130C, 0760L, Blocage mode actif.

English descriptors

KwdEn :
- Active mode locking, Binary compounds, Gallium Arsenides, Gallium Phosphides, III-V semiconductors, Indium Arsenides, Indium Phosphides, Light interferometry, Optical pulse, Quaternary compounds, ps range.

Abstract

The specific approach to characterizing the train-average parameters of low-power picosecond optical pulses with the frequency chirp, arranged in high-repetition-frequency trains, in both time and frequency domains is elaborated for the important case when semiconductor heterolasers operate in the active mode-locking regime. This approach involves the joint Wigner time-frequency distributions, which can be created for those pulses due to exploitation of a novel interferometric technique under discussion. Practically, the InGaAsP/InP-heterolasers generating at the wavelength 1320 nm were used during the experiments carried out and an opportunity of reconstructing the corresponding joint Wigner time-frequency distributions was successfully demonstrated.

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Pascal:10-0079084

Le document en format XML

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<author><name sortKey="Shcherbakov, Alexandre S" uniqKey="Shcherbakov A">Alexandre S. Shcherbakov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Astrophysics, Optics and Electronics</s1>
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<author><name sortKey="Moreno Zarate, Pedro" uniqKey="Moreno Zarate P">Pedro Moreno Zarate</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute for Astrophysics, Optics and Electronics</s1>
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<author><name sortKey="Campos Acosta, Joaquin" uniqKey="Campos Acosta J">Joaquin Campos Acosta</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>CSIC-Institute for Applied Physics, Serrano 144</s1>
<s2>Madrid, 28006</s2>
<s3>ESP</s3>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
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<author><name sortKey="Il N, Yurij V" uniqKey="Il N Y">Yurij V. Il N</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya St. 26</s1>
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<author><name sortKey="Tarasov, Il Ya S" uniqKey="Tarasov I">Il Ya S. Tarasov</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active mode locking</term>
<term>Binary compounds</term>
<term>Gallium Arsenides</term>
<term>Gallium Phosphides</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>Light interferometry</term>
<term>Optical pulse</term>
<term>Quaternary compounds</term>
<term>ps range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Impulsion optique</term>
<term>Interférométrie optique</term>
<term>Domaine temps ps</term>
<term>Composé quaternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Phosphure</term>
<term>Gallium Phosphure</term>
<term>Indium Arséniure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>InGaAsP</term>
<term>As Ga In P</term>
<term>In P</term>
<term>InP</term>
<term>0130C</term>
<term>0760L</term>
<term>Blocage mode actif</term>
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<front><div type="abstract" xml:lang="en">The specific approach to characterizing the train-average parameters of low-power picosecond optical pulses with the frequency chirp, arranged in high-repetition-frequency trains, in both time and frequency domains is elaborated for the important case when semiconductor heterolasers operate in the active mode-locking regime. This approach involves the joint Wigner time-frequency distributions, which can be created for those pulses due to exploitation of a novel interferometric technique under discussion. Practically, the InGaAsP/InP-heterolasers generating at the wavelength 1320 nm were used during the experiments carried out and an opportunity of reconstructing the corresponding joint Wigner time-frequency distributions was successfully demonstrated.</div>
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<fC01 i1="01" l="ENG"><s0>The specific approach to characterizing the train-average parameters of low-power picosecond optical pulses with the frequency chirp, arranged in high-repetition-frequency trains, in both time and frequency domains is elaborated for the important case when semiconductor heterolasers operate in the active mode-locking regime. This approach involves the joint Wigner time-frequency distributions, which can be created for those pulses due to exploitation of a novel interferometric technique under discussion. Practically, the InGaAsP/InP-heterolasers generating at the wavelength 1320 nm were used during the experiments carried out and an opportunity of reconstructing the corresponding joint Wigner time-frequency distributions was successfully demonstrated.</s0>
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   |texte=   Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique
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Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique

Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri